发明授权
- 专利标题： Coaxial transistor structure
- 专利标题（中）： 同轴晶体管结构
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申请号： US12255721申请日： 2008-10-22
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公开(公告)号： US08030714B2公开(公告)日： 2011-10-04
- 发明人: Chun-Chu Yang
- 申请人： Chun-Chu Yang
- 代理机构： Muncy, Geissler, Olds & Lowe, PLLC
- 优先权： TW96139774A 20071024
- 主分类号： H01L29/06
- IPC分类号： H01L29/06
摘要：
The present invention discloses a coaxial transistor formed on a substrate, particularly a coaxial metal-oxide-semiconductor field-effect transistor (CMOSFET). The chips or substrates of the CMOSFETs can be stacked up and connected via through-holes to form a coaxial complementary metal-oxide-semiconductor field-effect transistor (CCMOSFET), which is both full-symmetric and full-complementarily, has a higher integration and is free of the latch-up problem.
公开/授权文献
- US20090108307A1 Coaxial Transistor Structure 公开/授权日：2009-04-30
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