发明授权
- 专利标题： Chip cooling channels formed in wafer bonding gap
- 专利标题（中）： 在晶片接合间隙中形成的芯片冷却通道
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申请号： US11701317申请日： 2007-01-31
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公开(公告)号： US08030754B2公开(公告)日： 2011-10-04
- 发明人: Peter G. Hartwell , Duncan Stewart
- 申请人： Peter G. Hartwell , Duncan Stewart
- 申请人地址： US TX Houston
- 专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人地址： US TX Houston
- 主分类号： H01L23/15
- IPC分类号： H01L23/15 ; H01L23/06
摘要：
One embodiment in accordance with the invention is a system that can include a first wafer and a second wafer. The first wafer and the second wafer can be bonded together by a wafer bonding process that forms a gap between the first wafer and the second wafer. The gap can be configured for receiving a heat extracting material.
公开/授权文献
- US20080179736A1 Chip cooling channels formed in wafer bonding gap 公开/授权日：2008-07-31