发明授权
- 专利标题： Active matrix substrate and method of manufacturing the same
- 专利标题（中）： 有源矩阵基板及其制造方法
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申请号： US12353480申请日： 2009-01-14
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公开(公告)号： US08031283B2公开(公告)日： 2011-10-04
- 发明人: Toshio Araki , Osamu Miyakawa , Nobuaki Ishiga , Shingo Nagano
- 申请人： Toshio Araki , Osamu Miyakawa , Nobuaki Ishiga , Shingo Nagano
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Electric Corporation
- 当前专利权人： Mitsubishi Electric Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2008-020505 20080131
- 主分类号： G02F1/136
- IPC分类号： G02F1/136
摘要：
An active matrix substrate according to one aspect of the present invention is a TFT array substrate including a TFT. The active matrix substrate includes a gate signal line electrically connected to a gate electrode of the TFT, a first insulating film formed above the gate signal line, an auxiliary capacitance electrode formed above the first insulating film and supplied with a common potential, a second insulating film formed above the auxiliary capacitance electrode, a source signal line formed above the second insulating film and electrically connected to a source electrode of the TFT, a third insulating film formed above the source signal line, and a pixel electrode formed above the third insulating film so that the pixel electrode overlaps with a part of the auxiliary capacitance electrode.
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