Invention Grant
- Patent Title: Method for inspection of defects on a substrate
- Patent Title (中): 检查基板上的缺陷的方法
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Application No.: US12911190Application Date: 2010-10-25
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Publication No.: US08034641B2Publication Date: 2011-10-11
- Inventor: Woo-seok Ko , Chung-sam Jun , Hyung-su Son , Yu-sin Yang
- Applicant: Woo-seok Ko , Chung-sam Jun , Hyung-su Son , Yu-sin Yang
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2009-0101730 20091026
- Main IPC: H01L21/66
- IPC: H01L21/66

Abstract:
A method for inspection of defects on a substrate includes positioning a probe of a scanning probe microscopy (SPM) over and spaced apart from a substrate, includes scanning the substrate by changing a relative position of the probe with respect to the substrate on a plane spaced apart from and parallel to the substrate, and includes measuring a value of an induced current generated via the probe in at least two different regions of the substrate. The value of the induced current is variable according to at least a shape and a material of the substrate. The method further includes determining whether a defect exists by comparing the values of the induced currents measured in the at least two different regions of the substrate.
Public/Granted literature
- US20110097829A1 METHOD FOR INSPECTION OF DEFECTS ON A SUBSTRATE Public/Granted day:2011-04-28
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