发明授权
- 专利标题: Polysilicon film, thin film transistor using the same, and method for forming the same
- 专利标题(中): 多晶硅膜,使用其的薄膜晶体管及其形成方法
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申请号: US11314004申请日: 2005-12-22
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公开(公告)号: US08034671B2公开(公告)日: 2011-10-11
- 发明人: Chia-Tien Peng , Chih-Hsiung Chang
- 申请人: Chia-Tien Peng , Chih-Hsiung Chang
- 申请人地址: TW Hsin-Chu
- 专利权人: Au Optronics Corp.
- 当前专利权人: Au Optronics Corp.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Birch, Stewart, Kolasch & Birch, LLP
- 优先权: TW93140572A 20041224
- 主分类号: H01L21/84
- IPC分类号: H01L21/84
摘要:
A crystallizing method for forming a poly-Si film is described as follows. First, forming an activated layer on a substrate, and the molecule structure of the activated layer includes carbon, hydrogen, oxygen and silicon. And then, forming an amorphous silicon film on the activated layer. Finally, performing an annealing process to crystallize the amorphous silicon film and transform it into a poly-Si film.