发明授权
- 专利标题： Method for fabricating semiconductor device and semiconductor device
- 专利标题（中）： 制造半导体器件和半导体器件的方法
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申请号： US12897416申请日： 2010-10-04
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公开(公告)号： US08034707B2公开(公告)日： 2011-10-11
- 发明人: Tetsuya Ueda
- 申请人： Tetsuya Ueda
- 申请人地址： JP Osaka
- 专利权人： Panasonic Corporation
- 当前专利权人： Panasonic Corporation
- 当前专利权人地址： JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2004-309579 20041025
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
A method for fabricating a semiconductor device includes the steps of forming a plurality of lower interconnections at intervals in a first insulating film; removing a portion of the first insulating film located between the lower interconnections, thereby forming an interconnection-to-interconnection gap; forming a second insulating film over the first insulating film in which the lower interconnections and the interconnection-to-interconnection gap are formed such that an air gap is formed out of the interconnection-to-interconnection gap; and forming, in the second insulating film, a connection portion connected to one of the lower interconnections and an upper interconnection connected to the connection portion. The connection portion is formed to be connected to one of the lower interconnections not adjacent to the air gap.
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