发明授权
- 专利标题： Method and apparatus for manufacturing semiconductor devices
- 专利标题（中）： 用于制造半导体器件的方法和装置
-
申请号： US12083214申请日： 2006-10-13
-
公开(公告)号： US08034727B2公开(公告)日： 2011-10-11
- 发明人: Takashi Nakagawa
- 申请人： Takashi Nakagawa
- 申请人地址： JP Tokyo
- 专利权人： NEC Corporation
- 当前专利权人： NEC Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Foley & Lardner LLP
- 优先权： JP2005-299762 20051014
- 国际申请： PCT/JP2006/320887 WO 20061013
- 国际公布： WO2007/043709 WO 20070419
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/469
摘要：
A semiconductor device manufacturing method according to the present invention uses a first raw material gas containing Si, a second raw material gas containing a metal element M and an oxidation gas, in which a first step of supplying the oxidation gas onto a substrate to be treated, and a second step of supplying the first raw material gas are sequentially performed. The method further includes, after the first and second steps, a step of supplying the second raw material gas or gas mixture of the first raw material gas and the second raw material gas.
公开/授权文献
信息查询
IPC分类:
