Invention Grant
- Patent Title: Magnetic memory device
- Patent Title (中): 磁存储器件
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Application No.: US12773451Application Date: 2010-05-04
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Publication No.: US08035145B2Publication Date: 2011-10-11
- Inventor: Jun-Soo Bae , Jang-Eun Lee , Hyun-Jo Kim , Se-Chung Oh , Kyung-Tae Nam
- Applicant: Jun-Soo Bae , Jang-Eun Lee , Hyun-Jo Kim , Se-Chung Oh , Kyung-Tae Nam
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR2005-74937 20050816
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
A magnetic memory device is provided. The magnetic memory device includes an invariable pinning pattern and a variable pinning pattern on a substrate. A tunnel barrier pattern is interposed between the invariable pinning pattern and the variable pinning pattern, and the pinned pattern is interposed between the invariable pinning pattern and the tunnel barrier pattern. A storage free pattern is interposed between the tunnel barrier pattern and the variable pinning pattern, and a guide free pattern is interposed between the storage free pattern and the variable pinning pattern. A free reversing pattern is interposed between the storage and guide free patterns. The free reversing pattern reverses a magnetization direction of the storage free pattern and a magnetization direction of the guide free pattern in the opposite directions.
Public/Granted literature
- US20100213558A1 Magnetic Memory Device Public/Granted day:2010-08-26
Information query
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