Solid-state imaging device

Invention Grant

US08035178B2 Solid-state imaging device 有权

Title translation: 固态成像装置

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Patent Title: Solid-state imaging device
Patent Title (中): 固态成像装置
Application No.: US12377312

Application Date: 2008-06-24
Publication No.: US08035178B2

Publication Date: 2011-10-11
Inventor: Mitsuyoshi Mori , Yasuhiro Shimada , Takuma Katayama , Kenji Taniguchi , Masayuki Furuhashi
Applicant: Mitsuyoshi Mori , Yasuhiro Shimada , Takuma Katayama , Kenji Taniguchi , Masayuki Furuhashi
Applicant Address: JP Osaka
Assignee: Panasonic Corporation
Current Assignee: Panasonic Corporation
Current Assignee Address: JP Osaka
Agency: McDermott Will & Emery LLP
Priority: JP2007-208042 20070809
International Application: PCT/JP2008/001634 WO 20080624
International Announcement: WO2009/019813 WO 20090212
Main IPC: H01L27/142
IPC: H01L27/142

Abstract:

A plurality of pixel portions (12) are formed on a silicon substrate (11). A photoelectric converter portion (10) constituting each of the pixel portions (12) is electrically isolated by an element isolation portion (13) comprising an insulating film formed on the silicon substrate (11). The photoelectric converter portion (10) partitioned by the element isolation portion (13) is so formed that a crystal orientation of the sides in contact with the element isolation portion (13) corresponds to a direction. This makes it possible to reduce dark current caused by stress in the vicinity of the interface of the element isolation portion (13) and maintain high sensitivity even if the pixel portions (12) are made smaller in size.

Abstract(Chinese):

在硅衬底（11）上形成多个像素部分（12）。构成每个像素部分（12）的光电转换器部分（10）由形成在硅衬底（11）上的绝缘膜的元件隔离部分（13）电隔离。由元件隔离部分（13）分隔的光电转换器部分（10）形成为使得与元件隔离部分（13）接触的侧面的晶体取向对应于<00-1>方向。这使得可以减小由元件隔离部分13的界面附近的应力引起的暗电流，并且即使使像素部分（12）的尺寸更小，也能保持高灵敏度。

Public/Granted literature

US20100133592A1 SOLID-STATE IMAGING DEVICE Public/Granted day:2010-06-03

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L27/00	由在一个共用衬底内或其上形成的多个半导体或其他固态组件组成的器件（其零部件入H01L23/00，H01L29/00至H01L51/00；由多个单个固态器件组成的组装件入H01L25/00）
H01L27/14	.包括有对红外辐射、光、较短波长的电磁辐射或者微粒子辐射并且专门适用于把这样的辐射能转换为电能的，或适用于通过这样的辐射控制电能的半导体组件的（只与一个或多个电光源在结构上相结合的辐射敏感元件入H01L31/14；光导与光电元件的耦合入G02B6/42）
H01L27/142	..能量转换器件（包括与光伏电池集成或者直接相关的旁路二极管的单个光伏电池的光伏模块或者阵列只入H01L31/0443；由沉积在同一衬底上的多个薄膜太阳能电池组成的光伏模块入H01L31/046）