Invention Grant
- Patent Title: Through wafer via and method of making same
- Patent Title (中): 通过晶片通孔及其制作方法
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Application No.: US12188229Application Date: 2008-08-08
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Publication No.: US08035198B2Publication Date: 2011-10-11
- Inventor: Hanyi Ding , Alvin Jose Joseph , Anthony Kendall Stamper
- Applicant: Hanyi Ding , Alvin Jose Joseph , Anthony Kendall Stamper
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Schmeiser, Olsen & Watts
- Agent Richard M. Kotulak
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/538

Abstract:
A through wafer via structure. The structure includes: a semiconductor substrate having a top surface and an opposite bottom surface; and an array of through wafer vias comprising at least one electrically conductive through wafer via and at least one electrically non-conductive through wafer via, each through wafer via of the array of through wafer vias extending from the top surface of the substrate to between greater than halfway to and all the way to the bottom surface of the substrate. Also methods for fabricating the though wafer via structure.
Public/Granted literature
- US20100032808A1 THROUGH WAFER VIA AND METHOD OF MAKING SAME Public/Granted day:2010-02-11
Information query
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