Invention Grant
- Patent Title: Capacitor devices
- Patent Title (中): 电容器件
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Application No.: US12805886Application Date: 2010-08-23
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Publication No.: US08035951B2Publication Date: 2011-10-11
- Inventor: Shih-Hsien Wu , Shinn-Juh Lai , Min-Lin Lee , Shur-Fen Liu
- Applicant: Shih-Hsien Wu , Shinn-Juh Lai , Min-Lin Lee , Shur-Fen Liu
- Applicant Address: TW Chutung, Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Chutung, Hsinchu
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, LLP
- Main IPC: H01G4/06
- IPC: H01G4/06

Abstract:
A capacitor device with a capacitance is introduced. The capacitor device includes at least one capacitive element. The at least capacitive element comprises a pair of first conductive layers being opposed to each other, at least one first dielectric layer formed on a surface of at least one of the first conductive layers, and a second dielectric layer being sandwiched between the first conductive layers. The first dielectric layer has a first dielectric constant and the second dielectric layer has a second dielectric constant. The capacitance of the capacitor device depends on dielectric parameters of the first dielectric layer and the second dielectric layer. The dielectric parameters comprise the first dielectric constant and thickness of the at least one first dielectric layer and the second dielectric constant and thickness of the second dielectric layer.
Public/Granted literature
- US20100321862A1 Capacitor devices Public/Granted day:2010-12-23
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