Invention Grant
US08036039B2 Flash memory device and program method thereof 有权
闪存装置及其编程方法

Flash memory device and program method thereof
Abstract:
A flash memory device includes a memory cell array on which data is stored, and page buffers that are connected to the memory cells through the bit lines and apply one of the first voltage, second voltage or third voltage between the first and second voltage, to the respective bit line when performing the program.
Public/Granted literature
Information query
Patent Agency Ranking
0/0