发明授权
US08037433B2 System and methodology for determining layout-dependent effects in ULSI simulation 有权
用于确定ULSI仿真中与布局有关的影响的系统和方法

System and methodology for determining layout-dependent effects in ULSI simulation
摘要:
A layout of a semiconductor circuit is analyzed to calculate layout-dependant parameters that can include a mobility shift and a threshold voltage shift. Layout-dependant effects that affect the layout dependant parameters may include stress effects, rapid thermal anneal (RTA) effects, and lithographic effects. Intrinsic functions that do not reflect the layout-dependant effects are calculated, followed by calculation of scaling modifiers based on the layout-dependant parameters. A model output function that reflects the layout-dependant effects is obtained by multiplication of each of the intrinsic functions with a corresponding scaling parameter.
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