发明授权
- 专利标题: Method of manufacturing photoelectric conversion device
- 专利标题(中): 制造光电转换装置的方法
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申请号: US12754201申请日: 2010-04-05
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公开(公告)号: US08039293B2公开(公告)日: 2011-10-18
- 发明人: Akihiro Kawano
- 申请人: Akihiro Kawano
- 申请人地址: JP Tokyo
- 专利权人: Canon Kabushiki Kaisha
- 当前专利权人: Canon Kabushiki Kaisha
- 当前专利权人地址: JP Tokyo
- 代理机构: Fitzpatrick, Cella, Harper & Scinto
- 优先权: JP2009-115921 20090512
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
A method of manufacturing a photoelectric conversion device having a semiconductor substrate, comprises a first step of forming an insulating film on the semiconductor substrate, a second step of forming first holes in the insulating film, a third step of forming, in the insulating film, second holes shallower than the first holes, a fourth step of forming electrically conductive portions by embedding an electrically conductive material in the first holes, and forming planarization assisting portions by embedding the electrically conductive material in the second holes, and a fifth step of polishing the electrically conductive portions, the insulating film, and the planarization assisting portions until the planarization assisting portions are removed, thereby planarizing upper surfaces of the electrically conductive portions and the insulating film.
公开/授权文献
- US20100291729A1 METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE 公开/授权日:2010-11-18
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