发明授权
- 专利标题: Insulating layer, organic thin film transistor using the insulating layer, and method of fabricating the organic thin film transistor
- 专利标题(中): 绝缘层,使用绝缘层的有机薄膜晶体管,以及制造有机薄膜晶体管的方法
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申请号: US11782889申请日: 2007-07-25
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公开(公告)号: US08039294B2公开(公告)日: 2011-10-18
- 发明人: Gi Heon Kim , Sung Min Yoon , Kyu Ha Baek , In Kyu You , Seung Youl Kang , Seong Deok Ahn , Kyung Soo Suh
- 申请人: Gi Heon Kim , Sung Min Yoon , Kyu Ha Baek , In Kyu You , Seung Youl Kang , Seong Deok Ahn , Kyung Soo Suh
- 申请人地址: KR Daejeon
- 专利权人: Electronics and Telecommunications Research Institute
- 当前专利权人: Electronics and Telecommunications Research Institute
- 当前专利权人地址: KR Daejeon
- 代理机构: Ladas & Parry LLP
- 优先权: KR10-2006-0087258 20060911
- 主分类号: B05D3/00
- IPC分类号: B05D3/00
摘要:
Provided is an insulating layer in which an inorganic material is added to an organic polymer to thereby improve the insulating properties, an organic thin film transistor using the insulating layer, and a method of fabricating the organic thin film transistor. An insulating layer for an organic thin film transistor including a vinyl polymer and an inorganic material is provided. Here, a weight ratio of the vinyl polymer to the inorganic material may be in the range of 1:0.0001 to 1:0.5. Accordingly, it is possible to fabricate a thin film at low temperature and, further, to fabricate an insulating layer having a high-dielectric constant, not affecting other layers formed in the previous processes during the formation of the insulating layer.
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