发明授权
US08039325B2 Methods of fabricating semiconductor device having capacitorless one-transistor memory cell
有权
制造具有无电容的单晶体管存储单元的半导体器件的方法
- 专利标题： Methods of fabricating semiconductor device having capacitorless one-transistor memory cell
- 专利标题（中）： 制造具有无电容的单晶体管存储单元的半导体器件的方法
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申请号： US12654333申请日： 2009-12-17
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公开(公告)号： US08039325B2公开(公告)日： 2011-10-18
- 发明人: Ho-Ju Song , Sung-Hwan Kim , Yong-Chul Oh
- 申请人： Ho-Ju Song , Sung-Hwan Kim , Yong-Chul Oh
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Lee & Morse, P.C.
- 优先权： KR10-2008-0129318 20081218
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/84 ; H01L21/3205 ; H01L21/4763
摘要：
A method of fabricating a semiconductor device having a capacitorless one-transistor memory cell includes forming a first floating body pattern on a lower insulating layer of a substrate and a first gate pattern crossing over the first floating body pattern and covering sidewalls of the first floating body pattern is formed. The first floating body pattern at both sides of the first gate pattern is partially etched to form a protrusion portion extending between and above the partially etched regions, and first impurity regions are formed in the partially etched regions of the first floating body pattern.
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