发明授权
- 专利标题： Shared gate for conventional planar device and horizontal CNT
- 专利标题（中）： 常规平面器件和水平CNT的共用门
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申请号： US12902944申请日： 2010-10-12
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公开(公告)号： US08039334B2公开(公告)日： 2011-10-18
- 发明人: Toshiharu Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , Charles W. Koburger, III , Mark E. Masters
- 申请人： Toshiharu Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , Charles W. Koburger, III , Mark E. Masters
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Richard A. Kotulak, Esq.
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234
摘要：
A semiconductor structure in which a planar semiconductor device and a horizontal carbon nanotube transistor have a shared gate and a method of fabricating the same are provided in the present application. The hybrid semiconductor structure includes at least one horizontal carbon nanotube transistor and at least one planar semiconductor device, in which the at least one horizontal carbon nanotube transistor and the at least one planar semiconductor device have a shared gate and the at least one horizontal carbon nanotube transistor is located above a gate of the at least one planar semiconductor device.
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