发明授权
US08039342B2 Enhanced integrity of a high-K metal gate electrode structure by using a sacrificial spacer for cap removal
有权
通过使用用于盖去除的牺牲隔离物来增强高K金属栅电极结构的完整性
- 专利标题： Enhanced integrity of a high-K metal gate electrode structure by using a sacrificial spacer for cap removal
- 专利标题（中）： 通过使用用于盖去除的牺牲隔离物来增强高K金属栅电极结构的完整性
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申请号： US12907675申请日： 2010-10-19
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公开(公告)号： US08039342B2公开(公告)日： 2011-10-18
- 发明人: Uwe Griebenow , Jan Hoentschel , Thilo Scheiper , Andy Wei
- 申请人： Uwe Griebenow , Jan Hoentschel , Thilo Scheiper , Andy Wei
- 申请人地址： KY Grand Cayman
- 专利权人： GlobalFoundries Inc.
- 当前专利权人： GlobalFoundries Inc.
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Williams, Morgan & Amerson, P.C.
- 优先权： DE102009055438 20091231
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
In a process strategy for forming sophisticated high-k metal gate electrode structures in an early manufacturing phase, the dielectric cap material may be removed on the basis of a protective spacer element, thereby ensuring integrity of a silicon nitride sidewall spacer structure, which may preserve integrity of sensitive gate materials and may also determine the lateral offset of a strain-inducing semiconductor material.
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