Invention Grant
- Patent Title: Semiconductor device having vertically aligned pillar structures that have flat side surfaces and method for manufacturing the same
- Patent Title (中): 具有垂直排列的具有平坦侧表面的柱结构的半导体器件及其制造方法
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Application No.: US12491565Application Date: 2009-06-25
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Publication No.: US08039347B2Publication Date: 2011-10-18
- Inventor: Jong Han Shin , Hyung Soon Park , Jum Yong Park , Sung Jun Kim , Young Ju Lee
- Applicant: Jong Han Shin , Hyung Soon Park , Jum Yong Park , Sung Jun Kim , Young Ju Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Ladas & Parry LLP
- Priority: KR10-2008-0103741 20081022
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A semiconductor device having vertically aligned transistors made from pillar structures that have flat side surfaces is presented. The semiconductor device includes a semiconductor substrate, spacers, and gates. The semiconductor substrate has pillar structures that have flat side surfaces. The spacers are on sidewalls only on the upper portions of the pillar structures. The gates surround lower portions of the pillar structures.
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