发明授权
US08039375B2 Shallow junction formation and high dopant activation rate of MOS devices
有权
浅结点形成和MOS器件的高掺杂剂激活率
- 专利标题： Shallow junction formation and high dopant activation rate of MOS devices
- 专利标题（中）： 浅结点形成和MOS器件的高掺杂剂激活率
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申请号： US11804927申请日： 2007-05-21
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公开(公告)号： US08039375B2公开(公告)日： 2011-10-18
- 发明人: Chun-Feng Nieh , Keh-Chiang Ku , Nai-Han Cheng , Chi-Chun Chen , Li-Te S. Lin
- 申请人： Chun-Feng Nieh , Keh-Chiang Ku , Nai-Han Cheng , Chi-Chun Chen , Li-Te S. Lin
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L21/22
- IPC分类号： H01L21/22 ; H01L21/38 ; H01L35/22
摘要：
A method for forming a semiconductor structure includes providing a semiconductor substrate; forming a gate stack over the semiconductor substrate; implanting carbon into the semiconductor substrate; and implanting an n-type impurity into the semiconductor substrate to form a lightly doped source/drain (LDD) region, wherein the n-type impurity comprises more than one phosphorous atom. The n-type impurity may include phosphorous dimer or phosphorous tetramer.
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