Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12276787Application Date: 2008-11-24
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Publication No.: US08039873B2Publication Date: 2011-10-18
- Inventor: Kazuhide Abe , Tadahiro Sasaki , Kazuhiko Itaya
- Applicant: Kazuhide Abe , Tadahiro Sasaki , Kazuhiko Itaya
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-306030 20071127
- Main IPC: H01L27/105
- IPC: H01L27/105

Abstract:
A semiconductor device includes a substrate including an element region having a polygonal shape defined by a plurality of edges, and an isolation region surrounding the element region, and a plurality of gate electrodes provided on the substrate, crossing the element region, arranged in parallel with each other, and electrically connected with each other, wherein at least one of the edges does not cross any of the gate electrodes, and is not parallel to the gate electrodes.
Public/Granted literature
- US20090134430A1 SEMICONDUCTOR DEVICE Public/Granted day:2009-05-28
Information query
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