Invention Grant
US08039873B2 Semiconductor device 有权
半导体器件

Semiconductor device
Abstract:
A semiconductor device includes a substrate including an element region having a polygonal shape defined by a plurality of edges, and an isolation region surrounding the element region, and a plurality of gate electrodes provided on the substrate, crossing the element region, arranged in parallel with each other, and electrically connected with each other, wherein at least one of the edges does not cross any of the gate electrodes, and is not parallel to the gate electrodes.
Public/Granted literature
Information query
Patent Agency Ranking
0/0