发明授权
US08039916B2 CMOS pixel sensor with depleted photocollectors and a depleted common node
有权
具有耗尽的光电收集器和耗尽的公共节点的CMOS像素传感器
- 专利标题: CMOS pixel sensor with depleted photocollectors and a depleted common node
- 专利标题(中): 具有耗尽的光电收集器和耗尽的公共节点的CMOS像素传感器
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申请号: US12944027申请日: 2010-11-11
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公开(公告)号: US08039916B2公开(公告)日: 2011-10-18
- 发明人: Richard B. Merrill , Shri Ramaswami , Glenn J. Keller
- 申请人: Richard B. Merrill , Shri Ramaswami , Glenn J. Keller
- 申请人地址: US CA Santa Clara
- 专利权人: Foveon, Inc.
- 当前专利权人: Foveon, Inc.
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Lewis and Roca LLP
- 主分类号: H01L31/00
- IPC分类号: H01L31/00
摘要:
An active pixel sensor in a p-type semiconductor body includes an n-type common node formed below a pinning region. A plurality of n-type blue detectors more lightly doped than the common node are disposed below pinning regions and are spaced apart from the common node forming channels below blue color-select gates. A buried green photocollector is coupled to the surface through a first deep contact spaced apart from the common node forming a channel below a green color-select gate. A red photocollector buried deeper than the green photocollector is coupled to the surface through a second deep contact spaced apart from the common node forming a channel below a red color-select gate. A reset-transistor has a source disposed over and in contact with the common node. A source-follower transistor has gate coupled to the common node, a drain coupled to a power-supply node, and a source forming a pixel-sensor output.
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