发明授权
US08040183B1 Turn-on/turn-off snubber for a metallic-oxide-semiconductor field-effect transistor (MOSFET) class-D power amplifier
有权
用于金属氧化物半导体场效应晶体管（MOSFET）D类功率放大器的导通/关断缓冲器
- 专利标题： Turn-on/turn-off snubber for a metallic-oxide-semiconductor field-effect transistor (MOSFET) class-D power amplifier
- 专利标题（中）： 用于金属氧化物半导体场效应晶体管（MOSFET）D类功率放大器的导通/关断缓冲器
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申请号： US12562723申请日： 2009-09-18
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公开(公告)号： US08040183B1公开(公告)日： 2011-10-18
- 发明人: David W. Cripe
- 申请人： David W. Cripe
- 申请人地址： US IA Cedar Rapids
- 专利权人： Rockwell Collins, Inc.
- 当前专利权人： Rockwell Collins, Inc.
- 当前专利权人地址： US IA Cedar Rapids
- 代理商 Daniel M. Barbieri
- 主分类号： H03F3/217
- IPC分类号： H03F3/217
摘要：
The present invention is an H-bridge power amplifier circuit which includes diodes connected in parallel with MOSFET switch pairs of the circuit, each MOSFET switch pair including a MOSFET switch and a reverse-conduction blocking switch. Further, the circuit includes a snubber inductor which is connected to the switch pairs and the diodes. The circuit further includes a control branch/control sub-circuit having a snubber capacitor and a control MOSFET switch. The circuit is configured for: blocking MOSFET negative current to prevent body diode conduction; inhibiting/preventing turn-off losses of the MOSFETs; and reducing switching losses associated with operation into inductive mistuning.
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