发明授权
- 专利标题： Charge mapping memory array formed of materials with mutable electrical characteristics
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申请号： US12622308申请日： 2009-11-19
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公开(公告)号： US08040722B2公开(公告)日： 2011-10-18
- 发明人: William S. Wong , Sanjiv Sambandan , Tse Nga Ng , Robert A. Street
- 申请人： William S. Wong , Sanjiv Sambandan , Tse Nga Ng , Robert A. Street
- 申请人地址： US CA Palo Alto
- 专利权人： Palo Alto Research Center Incorporated
- 当前专利权人： Palo Alto Research Center Incorporated
- 当前专利权人地址： US CA Palo Alto
- 代理机构： Marger Johnson & McCollom, P.C.
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
A memory cell array including a data line; a capacitor; and a transistor coupled between the data line and the capacitor. At least one of the capacitor and the transistor includes a material with a mutable electrical characteristic.A memory cell array including a first transistor coupled between a first node, a second node, and a third node; and a second transistor coupled between the second node and a fourth node. The first transistor includes a material with a mutable electrical characteristic.
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