Invention Grant
- Patent Title: Bit patterned medium
- Patent Title (中): 位图形介质
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Application No.: US12039112Application Date: 2008-02-28
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Publication No.: US08043733B2Publication Date: 2011-10-25
- Inventor: Hoo-san Lee , Sung-chul Lee , Hoon-sang Oh
- Applicant: Hoo-san Lee , Sung-chul Lee , Hoon-sang Oh
- Applicant Address: KR Suwon-Si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2007-0087692 20070830
- Main IPC: G11B5/66
- IPC: G11B5/66

Abstract:
A bit patterned medium in which an exchange coupling layer induces exchange coupling between adjacent bits in order to reduce a switching field difference resulting from different magnetization directions of bits. The exchange coupling layer is disposed either over or under a recording layer having a plurality of bits. The exchange coupling layer induces exchange coupling between a bit which is to be recorded and an adjacent bit and reduces a switching field difference resulting from a difference between the magnetization direction of the bit to be recorded and the magnetization direction of neighboring bits due to an exchange coupling force generated during the exchange coupling.
Public/Granted literature
- US20090061259A1 BIT PATTERNED MEDIUM Public/Granted day:2009-03-05
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