发明授权
US08043883B2 Method for manufacturing solid-state imaging device having improved sensitivity and reduced flare
有权
具有改善的灵敏度和减少耀斑的固态成像装置的制造方法
- 专利标题： Method for manufacturing solid-state imaging device having improved sensitivity and reduced flare
- 专利标题（中）： 具有改善的灵敏度和减少耀斑的固态成像装置的制造方法
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申请号： US13109653申请日： 2011-05-17
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公开(公告)号： US08043883B2公开(公告)日： 2011-10-25
- 发明人: Hiroshi Sakoh , Yoshiaki Nishi , Yasuo Takeuchi
- 申请人： Hiroshi Sakoh , Yoshiaki Nishi , Yasuo Takeuchi
- 申请人地址： JP Osaka
- 专利权人： Panasonic Corporation
- 当前专利权人： Panasonic Corporation
- 当前专利权人地址： JP Osaka
- 代理机构： Greenblum & Bernstein, P.L.C.
- 优先权： JP2007-182696 20070711
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
Provided is a solid-state imaging device that realizes sensitivity improvement while maintaining flare prevention effect even when miniaturization of cell is advanced. The solid-state imaging device according to the present invention includes: light receiving units formed on a semiconductor substrate; an antireflection film arranged above the semiconductor substrate, except above the light receiving units; and microlenses arranged above the light receiving units, in which the antireflection film is formed at a position equal to or higher than a position of the microlenses.
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