发明授权
- 专利标题: Semiconductor manufacturing method and semiconductor device
- 专利标题(中): 半导体制造方法和半导体器件
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申请号: US12613143申请日: 2009-11-05
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公开(公告)号: US08043904B2公开(公告)日: 2011-10-25
- 发明人: Takashi Izumida , Sanae Ito , Takahisa Kanemura
- 申请人: Takashi Izumida , Sanae Ito , Takahisa Kanemura
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Foley & Lardner LLP
- 优先权: JP2005-129608 20050427
- 主分类号: H01L21/336
- IPC分类号: H01L21/336
摘要:
A method of manufacturing a semiconductor device includes forming a mask layer on a first-conductivity-type semiconductor substrate, etching the semiconductor substrate using the mask layer as a mask, thereby forming a projecting semiconductor layer, forming a first insulating layer on the semiconductor substrate to cover a lower portion of the projecting semiconductor layer, doping a first-conductivity-type impurity into the first insulating layer, thereby forming a high-impurity-concentration layer in the lower portion of the projecting semiconductor layer, forming gate insulating films on side surfaces of the projecting semiconductor layer which upwardly extend from an upper surface of the first insulating layer, and forming a gate electrode on the gate insulating films and on the first insulating film.