发明授权
- 专利标题： Semiconductor device manufacturing method and semiconductor device manufacturing apparatus
- 专利标题（中）： 半导体器件制造方法和半导体器件制造装置
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申请号： US12528811申请日： 2008-02-25
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公开(公告)号： US08043963B2公开(公告)日： 2011-10-25
- 发明人: Masanobu Hatanaka , Kanako Tsumagari , Michio Ishikawa
- 申请人： Masanobu Hatanaka , Kanako Tsumagari , Michio Ishikawa
- 申请人地址： JP Chigasaki-shi, Kanagawa
- 专利权人： Ulvac, Inc.
- 当前专利权人： Ulvac, Inc.
- 当前专利权人地址： JP Chigasaki-shi, Kanagawa
- 代理机构： Novak Druce & Quigg LLP
- 优先权： JP2007-047944 20070227; JP2007-048065 20070227
- 国际申请： PCT/JP2008/053163 WO 20080225
- 国际公布： WO2008/105360 WO 20080904
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
A method for manufacturing a semiconductor device that improves the reliability of a metal cap layer and productivity. The method includes an insulation layer step of superimposing an insulation layer (11) on a semiconductor substrate (2) including an element region (2b), a recess step of forming a recess (12) in the insulation layer (11), a metal layer step of embedding a metal layer (13) in the recess (12), a planarization step of planarizing a surface of the insulation layer (11) and a surface of the metal layer (13) to be substantially flush with each other, and a metal cap layer step of forming a metal cap layer (16) containing at least zirconium element and nitrogen element on the surface of the insulation layer (11) and the surface of the metal layer (13) after the planarization step.
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