发明授权
- 专利标题： ESD protection device in high voltage and manufacturing method for the same
- 专利标题（中）： ESD保护器件在高压及制造方法相同
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申请号： US12352407申请日： 2009-01-12
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公开(公告)号： US08044466B2公开(公告)日： 2011-10-25
- 发明人: Ding-Jeng Yu , Tao Cheng , Chao-Chih Chiu
- 申请人： Ding-Jeng Yu , Tao Cheng , Chao-Chih Chiu
- 申请人地址： TW Hsin-Chu
- 专利权人： Mediatek Inc.
- 当前专利权人： Mediatek Inc.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Birch, Stewart, Kolasch & Birch, LLP
- 主分类号： H01L23/62
- IPC分类号： H01L23/62
摘要：
An ESD protection device comprises a substrate of a first conductive type; a transistor formed in the substrate having an input terminal of the first conductive type, a control terminal of a second conductive type, and a ground terminal of the first conductive type; and a diode formed in the substrate having a first terminal of the first conductive type and a second terminal of the second conductive type, wherein the input terminal and the second terminal are coupled to an input, and the ground terminal and the first terminal are coupled to a ground.
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