Invention Grant
US08045411B2 Semiconductor memory device with temperature sensing device capable of minimizing power consumption in refresh
有权
具有温度感测装置的半导体存储器件能够最小化刷新时的功耗
- Patent Title: Semiconductor memory device with temperature sensing device capable of minimizing power consumption in refresh
- Patent Title (中): 具有温度感测装置的半导体存储器件能够最小化刷新时的功耗
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Application No.: US11785059Application Date: 2007-04-13
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Publication No.: US08045411B2Publication Date: 2011-10-25
- Inventor: Kyung-Hoon Kim , Patrick B. Moran
- Applicant: Kyung-Hoon Kim , Patrick B. Moran
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2006-0033729 20060413
- Main IPC: G11C7/04
- IPC: G11C7/04
Abstract:
A semiconductor memory device capable of measuring a temperature without the influence of noise includes a temperature sensing device for sensing a current temperature in response to a control signal, wherein the semiconductor memory device enters a power save mode for a predetermined time starting from an activation of the control signal and wherein the power save mode has substantially no power consumption. A method for driving a semiconductor memory device in accordance with the present invention includes sensing a current temperature in response to a control signal and entering a power save mode for a predetermined time starting from an activation of the control signal, wherein the power save mode has substantially no power consumption.
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