Invention Grant
- Patent Title: Pattern inspection apparatus and method
- Patent Title (中): 图案检验装置及方法
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Application No.: US12852314Application Date: 2010-08-06
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Publication No.: US08045785B2Publication Date: 2011-10-25
- Inventor: Tadashi Kitamura , Kazufumi Kubota , Shinichi Nakazawa , Neeti Vohra , Masahiro Yamamoto , Toshiaki Hasebe
- Applicant: Tadashi Kitamura , Kazufumi Kubota , Shinichi Nakazawa , Neeti Vohra , Masahiro Yamamoto , Toshiaki Hasebe
- Applicant Address: JP Tokyo
- Assignee: NGR Inc.
- Current Assignee: NGR Inc.
- Current Assignee Address: JP Tokyo
- Agency: Lathrop & Gage LLP
- Priority: JP11-239586 19990826; JP2000-078847 20000321; JP2002-307406 20021022; JP2004-047098 20040223; JP2005-147379 20050519; JP2005-322035 20051107
- Main IPC: G06K9/00
- IPC: G06K9/00 ; G06K9/48 ; G06K9/62

Abstract:
A fine pattern, such as a semiconductor integrated circuit (LSI), a liquid crystal panel, and a photomask (reticle) for the semiconductor or the liquid crystal panel, which are fabricated based on data for fabricating the fine pattern such as design data is inspected by a pattern inspection apparatus. The pattern inspection apparatus for inspecting a pattern to-be-inspected uses an image of the pattern to-be-inspected and data for fabricating the pattern to-be-inspected. The pattern inspection apparatus includes a reference pattern generation device configured to generate a reference pattern represented by one or more lines from the data, an image generation device configured to generate the image of the pattern to-be-inspected, a detecting device configured to detect an edge of the image of the pattern to-be-inspected, and an inspection device configured to inspect the pattern to-be-inspected by comparing edges of the image of the pattern to-be-inspected with the one or more lines of the reference pattern.
Public/Granted literature
- US20100303334A1 PATTERN INSPECTION APPARATUS AND METHOD Public/Granted day:2010-12-02
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