发明授权
- 专利标题: Method for correcting layout with pitch change section
- 专利标题(中): 用间距改变部分校正布局的方法
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申请号: US12341980申请日: 2008-12-22
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公开(公告)号: US08046723B2公开(公告)日: 2011-10-25
- 发明人: Chan Ha Park
- 申请人: Chan Ha Park
- 申请人地址: KR Icheon-si
- 专利权人: Hynix Semiconductor Inc.
- 当前专利权人: Hynix Semiconductor Inc.
- 当前专利权人地址: KR Icheon-si
- 代理机构: Marshall, Gerstein & Borun LLP
- 优先权: KR10-2008-0058486 20080620
- 主分类号: G06F9/455
- IPC分类号: G06F9/455
摘要:
A method for correcting a layout with a pitch change section may include disposing a pattern layout with the pitch change section having a first pattern and a second pattern at a pitch relatively larger than that of the first pattern, measuring the pitch change from the pattern layout, a step of measuring an aerial image intensity by performing a simulation operation on the area with the pitch change section; modifying the pitch of the layout in the pitch change section based on a threshold intensity value at which the pattern is formed; and processing the layout correction to cause the pitch to exist within the threshold range by comparing the image intensity of the modified layout with the image intensity of the reference area.
公开/授权文献
- US20090319970A1 Method for Correcting Layout with Pitch Change Section 公开/授权日:2009-12-24
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