Invention Grant
- Patent Title: Thin film transistor array substrate and method for manufacturing the same
- Patent Title (中): 薄膜晶体管阵列基板及其制造方法
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Application No.: US12436221Application Date: 2009-05-06
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Publication No.: US08048698B2Publication Date: 2011-11-01
- Inventor: Hsiang-Lin Lin
- Applicant: Hsiang-Lin Lin
- Applicant Address: TW Hsinchu
- Assignee: Au Optronics Corp.
- Current Assignee: Au Optronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: Thomas, Kayden, Horstemeyer & Risley, LLP
- Priority: TW98102888A 20090123
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A thin film transistor array structure and a method for manufacturing the same are provided. The thin film transistor array structure comprises a substrate, including a transition area and a pad area. A patterned first metal layer is formed on the substrate, wherein the patterned first metal layer includes a data connecting line disposed in the transition area, and a data pad and a gate pad disposed in the pad area. A patterned first insulation layer is formed on the patterned first metal layer. The patterned first insulation layer at least defines a first opening on the gate pad, a second opening on the data pad, and a third opening in the transition area, so as to simplify following processes to increase the yield.
Public/Granted literature
- US20100187537A1 Thin Film Transistor Array Substrate and Method for Manufacturing the Same Public/Granted day:2010-07-29
Information query
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