Invention Grant
- Patent Title: Bipolar device having buried contacts
- Patent Title (中): 双极器件具有埋接触点
-
Application No.: US11533785Application Date: 2006-09-21
-
Publication No.: US08049282B2Publication Date: 2011-11-01
- Inventor: Mark Dyson , Daniel C. Kerr , Nace M. Rossi
- Applicant: Mark Dyson , Daniel C. Kerr , Nace M. Rossi
- Applicant Address: US PA Allentown
- Assignee: Agere Systems Inc.
- Current Assignee: Agere Systems Inc.
- Current Assignee Address: US PA Allentown
- Main IPC: H04Q11/00
- IPC: H04Q11/00
Abstract:
The invention, in one aspect, provides a semiconductor device that includes a collector for a bipolar transistor located within a semiconductor substrate and a buried contact, at least a portion of which is located in the collector to a depth sufficient that adequately contacts the collector.
Public/Granted literature
- US20080076228A1 BIPOLAR DEVICE HAVING BURIED CONTACTS Public/Granted day:2008-03-27
Information query
