Invention Grant
- Patent Title: Wafer stacked package waving bertical heat emission path and method of fabricating the same
- Patent Title (中): 晶圆叠层包装挥发热发射路径及其制造方法
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Application No.: US12581920Application Date: 2009-10-20
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Publication No.: US08049329B2Publication Date: 2011-11-01
- Inventor: Joong-Hyun Baek , Hee-Jin Lee
- Applicant: Joong-Hyun Baek , Hee-Jin Lee
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2006-0105628 20061030
- Main IPC: H01L23/34
- IPC: H01L23/34

Abstract:
A wafer stacked semiconductor package (WSP) having a vertical heat emission path and a method of fabricating the same are provided. The WSP comprises a substrate on which semiconductor chips are mounted; a plurality of semiconductor chips stacked vertically on the substrate; a cooling through-hole formed vertically in the plurality of semiconductor chips, and sealed; micro holes formed on the circumference of the cooling through-hole; and coolant filling the inside of the cooling through-hole. Accordingly, the WSP reduces a temperature difference between the semiconductor chips and quickly dissipates the heat generated by the stacked semiconductor chips.
Public/Granted literature
- US20100038769A1 WAFER STACKED PACKAGE WAVING BERTICAL HEAT EMISSION PATH AND METHOD OF FABRICATING THE SAME Public/Granted day:2010-02-18
Information query
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