发明授权
- 专利标题: Flash memory data correction and scrub techniques
- 专利标题(中): 闪存数据校正和擦除技术
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申请号: US12945000申请日: 2010-11-12
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公开(公告)号: US08050095B2公开(公告)日: 2011-11-01
- 发明人: Carlos J. Gonzalez , Kevin M. Conley
- 申请人: Carlos J. Gonzalez , Kevin M. Conley
- 申请人地址: US TX Plano
- 专利权人: SanDisk Technologies Inc.
- 当前专利权人: SanDisk Technologies Inc.
- 当前专利权人地址: US TX Plano
- 代理机构: Davis Wright Tremaine LLP
- 主分类号: G11C16/04
- IPC分类号: G11C16/04
摘要:
In order to maintain the integrity of data stored in a flash memory that are susceptible to being disturbed by operations in adjacent regions of the memory, disturb events cause the data to be read, corrected and re-written before becoming so corrupted that valid data cannot be recovered. The sometimes conflicting needs to maintain data integrity and system performance are balanced by deferring execution of some of the corrective action when the memory system has other high priority operations to perform. In a memory system utilizing very large units of erase, the corrective process is executed in a manner that is consistent with efficiently rewriting an amount of data much less than the capacity of a unit of erase.
公开/授权文献
- US20110055468A1 Flash Memory Data Correction and Scrub Techniques 公开/授权日:2011-03-03
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