发明授权
US08050106B2 Fast writing non-volatile memory with main and auxiliary memory areas
有权
快速写入具有主和辅助存储区域的非易失性存储器
- 专利标题: Fast writing non-volatile memory with main and auxiliary memory areas
- 专利标题(中): 快速写入具有主和辅助存储区域的非易失性存储器
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申请号: US12113709申请日: 2008-05-01
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公开(公告)号: US08050106B2公开(公告)日: 2011-11-01
- 发明人: Francesco La Rosa , Antonino Conte
- 申请人: Francesco La Rosa , Antonino Conte
- 申请人地址: FR Montrouge IT Agrate Brianza
- 专利权人: STMicroelectronics SA,STMicroelectronics S.r.l.
- 当前专利权人: STMicroelectronics SA,STMicroelectronics S.r.l.
- 当前专利权人地址: FR Montrouge IT Agrate Brianza
- 代理机构: Seed IP Law Group PLLC
- 代理商 Lisa K. Jorgenson; Hayley J. Stevens
- 优先权: FR0703152 20070502; FR0703153 20070502; FR0703154 20070502
- 主分类号: G11C16/04
- IPC分类号: G11C16/04
摘要:
A method writes data in a non-volatile memory comprising memory cells that are erased before being written. The method comprises the steps of providing a main non-volatile memory area comprising target pages, providing an auxiliary non-volatile memory area comprising auxiliary pages, providing a look-up table to associate to an address of invalid target page an address of valid auxiliary page, and, in response to a command for writing a piece of data in a target page writing the piece of data as well as the address of the target page in a first erased auxiliary page, invalidating the target page, and updating the look-up table.
公开/授权文献
- US20080301356A1 FAST WRITING NON-VOLATILE MEMORY 公开/授权日:2008-12-04
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