发明授权
- 专利标题: Body contact structures and methods of manufacturing the same
- 专利标题(中): 身体接触结构及其制造方法
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申请号: US12782320申请日: 2010-05-18
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公开(公告)号: US08053325B1公开(公告)日: 2011-11-08
- 发明人: Anthony Chou , Arvind Kumar , Shreesh Narasimha
- 申请人: Anthony Chou , Arvind Kumar , Shreesh Narasimha
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Roberts Mlotkowski Safran & Cole, P.C.
- 代理商 Joseph Petrokaitis
- 主分类号: H01L21/336
- IPC分类号: H01L21/336
摘要:
A body contact structure which reduce parasitic capacitance and improves body resistance of a device and methods of manufacture. The method includes forming a gate insulator material and gate electrode material on a substrate. The method further includes patterning the gate insulator material and the gate electrode material to form a gate structure having a shape with a first portion isolated from a second portion. The method further includes forming source and drain regions on sides of the first portion and a body contact at a side and under an area of the second portion, and forming an interlevel dielectric within a space that isolates the first portion from the second portion of the gate structure, and over the gate structure, source and drain regions and the body contact.