发明授权
US08053811B2 Group 3-5 nitride semiconductor multilayer substrate, method for manufacturing group 3-5 nitride semiconductor free-standing subtrate, and semiconductor element
失效
3-5族氮化物半导体多层基板，第3-5族氮化物半导体独立减渣剂的制造方法以及半导体元件
- 专利标题： Group 3-5 nitride semiconductor multilayer substrate, method for manufacturing group 3-5 nitride semiconductor free-standing subtrate, and semiconductor element
- 专利标题（中）： 3-5族氮化物半导体多层基板，第3-5族氮化物半导体独立减渣剂的制造方法以及半导体元件
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申请号： US11920563申请日： 2006-05-02
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公开(公告)号： US08053811B2公开(公告)日： 2011-11-08
- 发明人: Kazumasa Hiramatsu , Hideto Miyake , Yoshihiko Tsuchida , Yoshinobu Ono , Naohiro Nishikawa
- 申请人： Kazumasa Hiramatsu , Hideto Miyake , Yoshihiko Tsuchida , Yoshinobu Ono , Naohiro Nishikawa
- 申请人地址： JP Tokyo JP Tsu-shi, Mie
- 专利权人： Sumitomo Chemical Company Limited,National University Corporation Mie University
- 当前专利权人： Sumitomo Chemical Company Limited,National University Corporation Mie University
- 当前专利权人地址： JP Tokyo JP Tsu-shi, Mie
- 代理机构： Fitch, Even, Tabin & Flannery
- 优先权： JP2005-146346 20050519; JP2005-256022 20050905
- 国际申请： PCT/JP2006/309166 WO 20060502
- 国际公布： WO2006/123540 WO 20061123
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A group 3-5 nitride semiconductor multilayer substrate (1) and a method for manufacturing such substrate are provided. A semiconductor layer (12) is formed on a base substrate (11), and a mask (13) is formed on the semiconductor layer (12). Then, after forming a group 3-5 nitride semiconductor crystalline layer (14) by selective growing, the group 3-5 nitride semiconductor crystalline layer (14) and the base substrate (11) are separated. The crystallinity of the semiconductor layer (12) is lower than that of the group 3-5 nitride semiconductor crystalline layer (14).
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