Disclosed are embodiments of a semiconductor structure that incorporates multiple nitride layers stacked between the center region of a device and a blanket oxide layer. These nitride layers are more thermally conductive than the blanket oxide layer and, thus provide improved heat dissipation away from the device. Also disclosed are embodiments of a method of forming such a semiconductor structure in conjunction with the formation of any of the following nitride layers during standard processing of other devices: a nitride hardmask layer (OP layer), a “sacrificial” nitride layer (SMT layer), a tensile nitride layer (WN layer) and/or a compressive nitride layer (WP layer). Optionally, the embodiments also incorporate incomplete contacts that extend through the blanket oxide layer into one or more of the nitride layers without contacting the device in order to further improve heat dissipation.