发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US12400380申请日: 2009-03-09
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公开(公告)号: US08054596B2公开(公告)日: 2011-11-08
- 发明人: Jun Koyama , Yoshifumi Tanada , Hideaki Shishido
- 申请人: Jun Koyama , Yoshifumi Tanada , Hideaki Shishido
- 申请人地址: JP Atsugi-shi, Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi-shi, Kanagawa-ken
- 代理机构: Husch Blackwell LLP
- 优先权: JP2008-065980 20080314
- 主分类号: H02H9/00
- IPC分类号: H02H9/00 ; H01C7/12 ; H02H1/00 ; H02H1/04 ; H02H3/22 ; H02H9/06
摘要:
An element is protected without hampering an actual operation in the case where overvoltage that might damage the element is applied. A semiconductor device includes a first potential supply terminal 100; a second potential supply terminal 101; a protection circuit 107 which includes a voltage divider 102 electrically connected to the first potential supply terminal 100 and the second potential supply terminal 101, a control circuit 103, and a bypass circuit 106; and a functional circuit 108 which is electrically connected to the first potential supply terminal 100 and the second potential supply terminal 101 through the protection circuit 107.
公开/授权文献
- US20090231021A1 Semiconductor Device 公开/授权日:2009-09-17