Invention Grant
US08055057B2 Method for detecting defects in a substrate having a semiconductor device thereon
失效
用于检测其上具有半导体器件的衬底中的缺陷的方法
- Patent Title: Method for detecting defects in a substrate having a semiconductor device thereon
- Patent Title (中): 用于检测其上具有半导体器件的衬底中的缺陷的方法
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Application No.: US12007680Application Date: 2008-01-14
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Publication No.: US08055057B2Publication Date: 2011-11-08
- Inventor: Moon-Shik Kang , Jong-An Kim , Myung-Sub Lee , Yu-Sin Yang , Ji-Hye Kim
- Applicant: Moon-Shik Kang , Jong-An Kim , Myung-Sub Lee , Yu-Sin Yang , Ji-Hye Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2007-0004688 20070116
- Main IPC: G06K9/00
- IPC: G06K9/00

Abstract:
An inspection apparatus and a method for detecting defects in a substrate having a semiconductor device thereon are provided. The method includes establishing a first inspection region including first patterns repeatedly formed in a first direction and a second inspection region including second patterns repeatedly formed in a second direction on the substrate, determining a first unit inspection size of the first inspection region and a second unit inspection size of the second inspection region, obtaining images of the first and second patterns by moving the substrate in the first direction, and detecting defects in the first and second inspection regions by comparing the obtained images of portions of the first and second inspection regions, respectively, with each other. The first inspection size and second inspection size function as comparison units if defects are detected. The substrate may face an image receiving member.
Public/Granted literature
- US20080172196A1 Method for detecting defects in a substrate having a semiconductor device thereon Public/Granted day:2008-07-17
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