Invention Grant
- Patent Title: Semiconductor memory system and wear-leveling method thereof
- Patent Title (中): 半导体存储器系统及其磨损均衡方法
-
Application No.: US12316508Application Date: 2008-12-12
-
Publication No.: US08055836B2Publication Date: 2011-11-08
- Inventor: Soo-Jeong Kim , Jun-Young Cho , Min-Soo Moon
- Applicant: Soo-Jeong Kim , Jun-Young Cho , Min-Soo Moon
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Onello & Mello, LLP
- Priority: KR10-2007-0130186 20071213
- Main IPC: G06F12/00
- IPC: G06F12/00

Abstract:
Disclosed is a semiconductor memory system and wear-leveling method thereof. The semiconductor memory system is comprised of a nonvolatile memory including a plurality of logic blocks each of which is divided into a plurality of entries, a file system detecting a type of data to be stored and allocating the logic block or the entry for storing the data in accordance with the data type, and a translation layer leveling wearing degrees over the logic blocks or the entries in accordance with the data type.
Public/Granted literature
- US20090157952A1 Semiconductor memory system and wear-leveling method thereof Public/Granted day:2009-06-18
Information query