发明授权
US08058081B2 Method of testing an integrity of a material layer in a semiconductor structure
有权
测试半导体结构中的材料层的完整性的方法
- 专利标题： Method of testing an integrity of a material layer in a semiconductor structure
- 专利标题（中）： 测试半导体结构中的材料层的完整性的方法
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申请号： US11777355申请日： 2007-07-13
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公开(公告)号： US08058081B2公开(公告)日： 2011-11-15
- 发明人: Moritz Andreas Meyer , Eckhard Langer , Frank Koschinsky
- 申请人： Moritz Andreas Meyer , Eckhard Langer , Frank Koschinsky
- 申请人地址： US TX Austin
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US TX Austin
- 代理机构： Williams, Morgan & Amerson, P.C.
- 优先权： DE102006062015 20061229
- 主分类号： H01L21/66
- IPC分类号： H01L21/66
摘要：
A method comprises providing a semiconductor structure. The semiconductor structure comprises a feature comprising a first material and a layer of a second material formed over the feature. The semiconductor structure is exposed to an etchant. The etchant is adapted to selectively remove the first material, leaving the second material substantially intact. After exposing the semiconductor structure to the etchant, it is detected whether the feature has been affected by the etchant.
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