Invention Grant
- Patent Title: Restoring low dielectric constant film properties
- Patent Title (中): 恢复低介电常数膜性能
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Application No.: US12481382Application Date: 2009-06-09
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Publication No.: US08058183B2Publication Date: 2011-11-15
- Inventor: Zhenjiang Cui , May Yu , Alexandros T. Demos , Mehul Naik
- Applicant: Zhenjiang Cui , May Yu , Alexandros T. Demos , Mehul Naik
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469 ; H01L21/20 ; H01L21/36
Abstract:
A method for restoring the dielectric constant of a low dielectric constant film is described. A porous dielectric layer having a plurality of pores is formed on a substrate. The plurality of pores is then filled with an additive to provide a plugged porous dielectric layer. Finally, the additive is removed from the plurality of pores.
Public/Granted literature
- US20090317971A1 RESTORING LOW DIELECTRIC CONSTANT FILM PROPERTIES Public/Granted day:2009-12-24
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