发明授权
- 专利标题： Restoring low dielectric constant film properties
- 专利标题（中）： 恢复低介电常数膜性能
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申请号： US12481382申请日： 2009-06-09
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公开(公告)号： US08058183B2公开(公告)日： 2011-11-15
- 发明人: Zhenjiang Cui , May Yu , Alexandros T. Demos , Mehul Naik
- 申请人： Zhenjiang Cui , May Yu , Alexandros T. Demos , Mehul Naik
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Blakely, Sokoloff, Taylor & Zafman LLP
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/469 ; H01L21/20 ; H01L21/36
摘要：
A method for restoring the dielectric constant of a low dielectric constant film is described. A porous dielectric layer having a plurality of pores is formed on a substrate. The plurality of pores is then filled with an additive to provide a plugged porous dielectric layer. Finally, the additive is removed from the plurality of pores.
公开/授权文献
- US20090317971A1 RESTORING LOW DIELECTRIC CONSTANT FILM PROPERTIES 公开/授权日：2009-12-24
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