发明授权
US08058457B2 Star-shaped oligothiophene-arylene derivatives and organic thin film transistors using the same
有权
星形低聚噻吩 - 亚芳基衍生物和使用其的有机薄膜晶体管
- 专利标题: Star-shaped oligothiophene-arylene derivatives and organic thin film transistors using the same
- 专利标题(中): 星形低聚噻吩 - 亚芳基衍生物和使用其的有机薄膜晶体管
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申请号: US12656831申请日: 2010-02-17
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公开(公告)号: US08058457B2公开(公告)日: 2011-11-15
- 发明人: Kook Min Han , Eun Jeong Jeong , Chang Ju Kim , Eun Kyung Lee
- 申请人: Kook Min Han , Eun Jeong Jeong , Chang Ju Kim , Eun Kyung Lee
- 申请人地址: KR Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: Harness, Dickey & Pierce, P.L.C.
- 优先权: KR04-98674 20041129
- 主分类号: C07D409/14
- IPC分类号: C07D409/14 ; C07D417/14 ; C07D413/14 ; H01L51/00
摘要:
A star-shaped oligothiophene-arylene derivative in which an oligothiophene having p-type semiconductor characteristics is bonded to an arylene having n-type semiconductor characteristics positioned in the central moiety of the molecule and forms a star shape with the arylene, thereby simultaneously exhibiting both p-type and n-type semiconductor characteristics. Further, an organic thin film transistor using the oligothiophene-arylene derivative. The star-shaped oligothiophene-arylene derivative can be spin-coated at room temperature, leading to the fabrication of organic thin film transistors simultaneously satisfying the requirements of high charge carrier mobility and low off-state leakage current.
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