发明授权
- 专利标题: Light-emitting diode integration scheme
- 专利标题(中): 发光二极管集成方案
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申请号: US12535525申请日: 2009-08-04
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公开(公告)号: US08058669B2公开(公告)日: 2011-11-15
- 发明人: Ding-Yuan Chen , Wen-Chih Chiou , Chen-Hua Yu
- 申请人: Ding-Yuan Chen , Wen-Chih Chiou , Chen-Hua Yu
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Slater & Matsil, L.L.P.
- 主分类号: H01L33/00
- IPC分类号: H01L33/00
摘要:
A circuit structure includes a carrier substrate, which includes a first through-via and a second through-via. Each of the first through-via and the second through-via extends from a first surface of the carrier substrate to a second surface of the carrier substrate opposite the first surface. The circuit structure further includes a light-emitting diode (LED) chip bonded onto the first surface of the carrier substrate. The LED chip includes a first electrode and a second electrode connected to the first through-via and the second through-via, respectively.
公开/授权文献
- US20100051972A1 Light-Emitting Diode Integration Scheme 公开/授权日:2010-03-04
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