Invention Grant
- Patent Title: Stress buffer layer for ferroelectric random access memory
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Application No.: US12396976Application Date: 2009-03-03
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Publication No.: US08058677B2Publication Date: 2011-11-15
- Inventor: Scott R. Summerfelt , Kezhakkedath R. Udayakumar , John P. Campbell , Hugh P. McAdams
- Applicant: Scott R. Summerfelt , Kezhakkedath R. Udayakumar , John P. Campbell , Hugh P. McAdams
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Rose Alyssa Keagy; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L23/28
- IPC: H01L23/28

Abstract:
An F-RAM package having a semiconductor die containing F-RAM circuitry, a mold compound, and a stress buffer layer that is at least partially located between the semiconductor die and the mold compound. Also, a method for making an F-RAM package that includes providing a semiconductor die containing F-RAM circuitry, forming a patterned stress buffer layer over the semiconductor die, and forming a mold compound coupled to the stress buffer layer.
Public/Granted literature
- US20090321964A1 Stress Buffer Layer for Ferroelectric Random Access Memory Public/Granted day:2009-12-31
Information query
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