Invention Grant
- Patent Title: Antifuse structures, antifuse array structures, methods of manufacturing the same
- Patent Title (中): 防污结构，反熔丝阵列结构，制造方法
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Application No.: US12216094Application Date: 2008-06-30
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Publication No.: US08058701B2Publication Date: 2011-11-15
- Inventor: Deok-kee Kim , Yoon-dong Park , Seung-hoon Lee , I-hun Song , Won-joo Kim , Young-gu Jin , Hyuk-soon Choi , Suk-pil Kim
- Applicant: Deok-kee Kim , Yoon-dong Park , Seung-hoon Lee , I-hun Song , Won-joo Kim , Young-gu Jin , Hyuk-soon Choi , Suk-pil Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2007-0104060 20071016
- Main IPC: H01L23/52
- IPC: H01L23/52
Abstract:
Antifuse structures, antifuse arrays, methods of manufacturing, and methods of operating the same are provided. An antifuse structure includes bitlines formed as first diffusing regions within a semiconductor substrate, an insulation layer formed on the bitlines, and wordlines formed on the insulation layer. An antifuse array includes a plurality of antifuse structures arranged in an array.
Public/Granted literature
- US20090096060A1 Antifuse structures, antifuse array structures, methods of manufacturing the same Public/Granted day:2009-04-16
Information query
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