发明授权
- 专利标题： Semiconductor devices having redundant through-die vias and methods of fabricating the same
- 专利标题（中）： 具有冗余通孔的半导体器件及其制造方法
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申请号： US12041610申请日： 2008-03-03
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公开(公告)号： US08058707B1公开(公告)日： 2011-11-15
- 发明人: Stephen M. Trimberger , Arifur Rahman
- 申请人： Stephen M. Trimberger , Arifur Rahman
- 申请人地址： US CA San Jose
- 专利权人： Xilinx, Inc.
- 当前专利权人： Xilinx, Inc.
- 当前专利权人地址： US CA San Jose
- 代理商 Robert M. Brush; LeRoy D. Maunu; Thomas George
- 主分类号： H01L21/44
- IPC分类号： H01L21/44 ; H01L23/48 ; H01L29/41
摘要：
Semiconductor devices having redundant through-die vias (TDVs) and methods of fabricating the same are described. A substrate is provided having conductive interconnect formed on an active side thereof. Through die vias (TDVs) are formed in the substrate between a backside and the active side thereof. The TDVs include signal TDVs, redundant TDVs (i.e., redundant signal TDVs), and power supply TDVs. The signal TDVs are spaced apart from the redundant TDVs to form a pattern of TDV pairs. The power supply TDVs are interspersed among the TDV pairs. The conductive interconnect includes first signal conductors electrically coupling each of the signal TDVs to a respective one of the redundant TDVs defining a respective one of the TDV pairs.
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